Global Next Generation Non Volatile Memory Market By Product (FeRAM, PCM, MRAM, and ReRAM), By Application (Mobile Phones, Cache Memory & Enterprise Storage, Industrial & Automotive, Mass Storage, and Embedded MCU & Smart Cards), By Region and Companies - Industry Segment Outlook, Market Assessment, Competition Scenario, Trends and Forecast 2023-2032

Next Generation Non Volatile Memory Market Overview

The market for next-generation, non-volatile memories was valued at US$ 1,574.9 million in 2021. It is expected that it will continue to grow at a CAGR of 20.1% during the forecast period.

The increasing demand for fast, economical, high-scalable memory solutions is expected to propel the industry forward. As data grows, so does the need for data management and storage.

Global Next Generation Non Volatile Memory Market Scope:

Product Analysis

Non-volatile memories (NVM), which are highly reliable and easy to program with a microcomputer or in modern electronic equipment, account for the next generation’s highest market share in 2021. There are few non-volatile memories, including Phase-Change memory(PCM), Magneto-resistive RAMTM (MRAM), magneto-resistive RAMTM (FeRAM), resistive RAMTM (RRAM), flash, spin-transfer-torque RAM (STTRAM), and magneto-resistive RAMTM (MRAM).

In 2021, MRAM was the most dominant product segment in the industry with a market worth US$ 290.4 million. ReRAM is expected to be the fastest-growing product segment during the forecast period. The functional properties of memory types with respect to programming or erasing operations are what they are usually classified under.

Application Analysis

Industry products meet the need for specific, small-form devices. STT MRAM and PCM memories are adapting more rapidly to make enterprise storage the dominant application segment. The Embedded and Smart Card applications segments are expected to gain popularity over the forecast period.

Because of the increasing demand for web-based information, the non-volatile memory will likely improve the performance and input performance of enterprise storage systems. Expect to see more PCM being used in mobile phones than NOR and flash memory. As a replacement for flash higher density chips, microcontrollers and smartcards are likely to use PCM, MRAM, and STT-MRAM.

Key Market Segments

By Product

• FeRAM
• PCM
• MRAM
• ReRAM

By Application

• Mobile Phones
• Cache Memory & Enterprise Storage
• Industrial & Automotive
• Mass Storage
• Embedded MCU & Smart Cards

Market Dynamics:

Industry players aim to offer power conservation technologies and improve industry efficiency. For new technologies to become more efficient and faster, it is important to reduce profit margins in traditional memory technologies.

The market is expected to grow due to the increasing demand for universal storage devices as well as mass storage. Over the next six years, market growth will be limited by the high cost of design and instabilities under extreme environmental conditions.

There may be new market opportunities in the future due to increased demand for various applications, such as industrial flash memory and replacement. The industry may see a rise in demand for flexible electronics and wearable electronics.

Regional Analysis

Because of the presence of industry leaders in countries like China, Japan, and South Korea, Asia Pacific is anticipated to account for the highest market share of 35.6% during the forecast period. In the coming years, regional growth is also supported by the expanding computer and mobile phone industries.

DDR and SATA interfaces are available. DDR interface is used in high-speed, memory-intensive applications like industrial, networking, and telecom equipment. They are used on workstations servers, and graphic cards as well.

DDR allows you to fetch data on the rising and fall edges of clock cycles. This doubles your data rate for a given frequency. The SATA interface is mostly used in laptops and computer systems. All computer applications can use the PCIe interface, including those of enterprise servers, personal computers, communication systems, and industrial buffering and caching applications.

Key Regions and Countries covered in the report:

• North America
  • US
  • Canada
  • Mexico
• Europe
  • Germany
  • UK
  • France
  • Italy
  • Russia
  • Spain
  • Rest of Europe
• APAC
  • China
  • Japan
  • South Korea
  • India
  • Rest of Asia-Pacific
• South America
  • Brazil
  • Argentina
  • Rest of South America
• MEA
  • GCC
  • South Africa
  • Israel
  • Rest of MEA

Market Share & Key Players Analysis:

Adesto Technologies, Crossbar Inc., Micron Technology, Everspin Technologies, Fujitsu Ltd., Intel Corporation, and Samsung Electronics Co. Ltd. are the key players in the industry. MRAM is being developed by Toshiba and SK Hynix in South Korea. It has a high storage capacity, consumes less power than DRAM, and is widely used in smartphones and other electronic devices.

Market Key Players:

• Adesto Technologies
• Everspin Technologies
• Crossbar Inc.
• Fujitsu Ltd.
• Intel Corporation
• Micron Technology
• Samsung Electronics Co. Ltd
• Cypress Semiconductor
• IBM Corporation
• Other Key Players

For the Next Generation Non Volatile Memory Market research study, the following years have been considered to estimate the market size: